ArF lithography technologies for 65 nm-node CMOS (CMOS5) with 30 nm logic gate and high density embedded memories

摘要

In this paper ArF lithography technology for 65nm-node CMOS with 30nm logic gate and high density embedded memories have been demonstrated. ArF step-and-scan exposure systems with 0.75NA are available under accurate lithography design with level specific focus and does error budgets. Also,the process steps with two kinds of lithography are implemented to fabricate GC pattern.