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Method to Integrate MRAM Devices to the Interconnects of 30nm and Beyond CMOS Technologies
Method to Integrate MRAM Devices to the Interconnects of 30nm and Beyond CMOS Technologies
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机译:将MRAM器件集成到30nm及以上CMOS技术互连中的方法
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摘要
A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.
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