65 nm device manufacture using shaped E-Beam lithography

机译：使用成形电子束光刻技术制造65 nm器件

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摘要

In this paper, SRAM cell device manufacture using shaped electron beam lithography was developed. TEM view of SRAM cell was showed.

机译：在本文中，开发了使用定型电子束光刻技术制造的SRAM单元器件。显示了SRAM单元的TEM图。

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《》|2003年|p.158-159|共2页
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Pain; L.; Charpin; M.; Laplanche; Y.; Todeschini; J.; Leininger; H.; Tourniol; S.; Faure; R.; Bossy; X.; Palla; R.; Beverina; A.; Broekaart; M.; Judong; F.; Brosselin; K.; Le Friec; Y.; Leverd; F.; De Jonghe; V.; Josse; E.; Hinsinger; O.; Brun; P.; Henry;
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中图分类无线电电子学、电信技术;
关键词
SRAM chips; integrated circuit manufacture; semiconductor device manufacture; electron beam lithography; transmission electron microscopy; SRAM cell device manufacture; shaped electron beam lithography; TEM; 65 nm;

机译：SRAM芯片;集成电路制造;半导体器件制造;电子束光刻;透射电子显微镜; SRAM单元器件制造;定型电子束光刻; TEM; 65 nm;

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专利

1. 65 nm Device Manufacture Using Shaped E-Beam Lithography [J] . Laurent PAIN, Murielle JURDIT, Yves LAPLANCHE, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第6B期

机译：使用成形电子束光刻技术制造65 nm器件
2. Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes [J] . Steven Steen, Sharee J. McNab, Lidija Sekaric, Microelectronic Engineering . 2006,第4a9期

机译：混合光刻：光学和电子束光刻的结合。研究高级设备节点的过程集成和设备性能的方法
3. Total solution in 157 nm lithography for below 65 nm node semiconductor devices [J] . Toshiro Itani, Toshifumi Suganaga, Wataru Wakamiya Microelectronic Engineering . 2004,第Jun期

机译：低于65 nm节点半导体器件的157 nm光刻总解决方案
4. 65 nm device manufacture using shaped E-Beam lithography [C] . Pain L., Charpin M., Laplanche Y., International Microprocesses and Nanotechnology Conference . 2003

机译：使用成形电子束光刻的65 nm器件制造
5. Characterizing Engineered Nanomaterials: From Environmental, Health and Safety Research to the Development of Shaped Nanosphere Lithography for Metamaterials. [D] . Lewicka, Zuzanna A. 2012

机译：工程纳米材料的表征：从环境，健康和安全研究到超材料成形纳米球形平版印刷的发展。
6. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices [O] . Adrian Iovan, Marco Fischer, Roberto Lo Conte, 2012

机译：小于10 nm的胶体光刻技术用于电路集成自旋光电器件
7. Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment [O] . Wong AKK, Pong WT 2002

机译：通过157nm光学光刻制造50nm器件的可行性：初步评估

65 nm device manufacture using shaped E-Beam lithography

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