首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >65 nm Device Manufacture Using Shaped E-Beam Lithography
【24h】

65 nm Device Manufacture Using Shaped E-Beam Lithography

机译:使用成形电子束光刻技术制造65 nm器件

获取原文
获取原文并翻译 | 示例
           

摘要

In the frame of the ALLIANCE program between Motorola, Philips Semiconductors and STMicroelectronics, electron beam direct write (EBDW) lithography based on shaped beam projection is employed to start quickly an aggressive 65 nm program for the printing of all critical levels. This paper reviews the economical opportunities offered by the introduction of electron beam (E-Beam) lithography for prototyping and advanced research and development applications. EBDW process integration capabilities are also demonstrated, confirming after electrical validation, the real possibilities of EBDW solution for application specific on integrated circuit (ASIC) manufacturing.
机译:在摩托罗拉,飞利浦半导体和意法半导体之间的ALLIANCE程序框架中,采用了基于定形束投影的电子束直接写入(EBDW)光刻技术,以快速启动具有侵略性的65 nm程序,用于打印所有关键级别。本文回顾了电子束(E-Beam)光刻技术的引入为原型设计和高级研发应用提供的经济机会。还演示了EBDW流程集成功能,在进行电气验证后确认了EBDW解决方案针对集成电路(ASIC)制造专用的实际可能性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号