Fast ambient switching for the multiple-step rapid thermal processing of wafers using a furnace-based RTP system

摘要

A new proprietary rapid thermal processing (RTP) method has been developed and implemented for the fast switching of a gas ambient surrounding a wafer inside a RTP furnace operated in the low pressure or atmospheric pressure regime. By controlling the gas flow pattern around a semi-conductor wafer, the effective volume of process gas interacting with the wafer has been reduced by a factor of 33. Thus, real-time gas sequencing can be realized so that multiple rapid thermal processing steps, involving dry and wet rapid thermal oxidation (RTO), rapid thermal nitridation (RTN), rapid thermal annealing (RTA) and chemical vapor deposition (CVD), can be carried out sequentially in a single RTP cycle. Experimental data from ion implant anneal and thermal oxide thin film growth will be presented to illustrate the major technical challenges and solutions associated with the integration of the new method into the Summit/spl trade/ RTP systems. Using this approach, the benefits of rapid thermal processing with high productivity and quick ambient switching is realized.