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Effect of growth and annealing conditions on interface charge of dry and wet oxides grown using rapid thermal oxidation

机译：生长和退火条件对快速热氧化生长的干氧化物和湿氧化物界面电荷的影响

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来源
《》|2001年|P.273-286|共14页
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Sharangpani; R.; Sing-Pin Tay;
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中图分类无线电电子学、电信技术 ;
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4. Effect of growth and annealing conditions on interface charge of dry and wet oxides grown using rapid thermal oxidation [C] . Sharangpani, R., Sing-Pin Tay . 2001

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5. THERMAL OXIDATION OF SILICON IN DRY OXYGEN: GROWTH KINETICS AND CHARGE CHARACTERIZATION IN THE THIN REGIME [D] . MASSOUD, HISHAM ZAKARIA 1983

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Effect of growth and annealing conditions on interface charge of dry and wet oxides grown using rapid thermal oxidation

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