Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

摘要

New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.