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Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out diffusion for Zn doped GaAs substrate

机译：Zn掺杂GaAs衬底通过Zn外扩散改善了GaAs / AlGaAs单量子阱的热稳定性

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《》|2000年|P.710-711|共2页
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Feng Zhao; Choi; I.W.;
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中图分类无线电电子学、电信技术;
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1. Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs (001) [J] . Feng Zhao, I.W. Choi, Shu Yuan, Thin Solid Films . 2003,第1a2期

机译：通过在掺杂锌的GaAs（001）上生长提高了AlGaAs / GaAs / AlGaAs单量子阱的热稳定性
2. Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells [J] . Toropov A.A., Kaibyshev V.K., Terentev Y.V., Semiconductors . 2011,第2期

机译：GaAs / AlGaAs / ZnSe / Zn（Cd）MnSe异质量子阱中的激子
3. Reactions of column-III vacancies and interstitials during Zn diffusion-induced disordering of GaAs/AlGaAs multiple-quantum-well structures [J] . Nguyen Hong Ky Physica, B. Condensed Matter . 1999,第0期

机译：Zn扩散引起的GaAs / AlGaAs多量子阱结构无序过程中III列空位和间隙的反应
4. Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out diffusion for Zn doped GaAs substrate [C] . Feng Zhao, Choi I.W., Institute of Electric and Electronic Engineer IEEE Lasers and Electro-Optics Society Annual Meeting . 2000

机译：通过Zn掺杂GaAs衬底的扩散来改善GaAs / Algaas单量子的热稳定性
5. Far-infrared studies of electron-electron interactions in Si-doped GaAs/AlGaAs multiple quantum wells. [D] . Jiang, Zhenxin. 1997

机译：掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions [O] . Martí Vega Antonio, Algora del Valle Carlos, Lopez Araujo Gerardo 1990

机译：Zn从等温液相外延溶液扩散到GaAs和AlGaAs中

Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out diffusion for Zn doped GaAs substrate

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