A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region

摘要

The superior performance of a new 60-V class lateral power MOSFET using a graded doping profile in the drift region has been demonstrated for the first time. A simple technique to achieve the graded doping profile for a 3.5 micron drift length extends the breakdown voltage capability of existing power devices in thin SOI (SIMOX) technology. Our detailed analysis reveals that a significant improvement in the on-state and capacitance-voltage performance is possible in comparison to a conventional uniformly doped device.