A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist

摘要

Line-edge roughness (LER) of resist patterns has become a serious problem in sub-100nm lithography, because LER leads to variations in device characteristics. In addition to evaluating the degree of LER, many researchers have also tried to reduce LER, In this study, we have proposed cross-linking in positive-tone resist as a new approach for reducing LER.