Radiation evaluation of 3.3 volt 16 M-bit DRAMs for solid state mass memory space applications

摘要

This paper presents the results of a radiation evaluation programme carried out on 9 different types of commercially available low voltage (3.3 V) 16 Mbit DRAMs. Device preparation details, testing issues and results obtained, for both Single Event Effects (SEE) and Total Ionising Dose (TID), are individually presented and compared, and recommendations given in respect of earlier 5.0 V 16 Mbit types tested.