Impact of channel doping and Ar implant on device characteristics of partially depleted SOI MOSFETs

摘要

It is known that partially depleted (PD) SOI MOSFETs have floating body (FB) effects which degrade device performance. Previously, an argon (Ar) implant technique was proposed to form recombination centers and subsequently suppress FB effects (Ohno et al. 1998). Retrograde channel doping using indium (In) for NMOSFET (NFET) or antimony (Sb) for PMOSFET (PFET) has been widely used for bulk CMOS technologies to achieve reduced short channel effects (Skotnicki et al. 1996). In this work, we present device characteristics of conventional and Ar implanted PD SOI MOSFETs using B or retrograde In as n-channel doping and P or retrograde Sb as p-channel doping. The experiments are based on a CMOS technology which features shallow trench isolation, 0.15/spl plusmn/0.04 /spl mu/m poly gate, surface channel MOSFETs with 35 /spl Aring/ gate oxide, shallow extensions and halo implants, and Co salicidation on a 1500 /spl Aring/ SOI substrate.