Investigation of quantum well lasers which have superlattice buffer layer

摘要

Abstract: Single quantum well AlGaAs/GaAs semiconductor lasers which have superlattice buffer layer have been fabricated by MBE. The experimental results how that the superlattice buffer layer can effectively bury the substrate defects and well interface can be achieved. The lasers can work continuously at room temperature, the operating wavelength is 780 $POM 2 nm and the lowest threshold current at room temperature is 30 mA, the output power with uncoated facets is greater than 20mW. !4