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Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self-aligned structure lasers

机译：GaAs / AlAs超晶格缓冲层对GaAs / AlGaAs自对准结构激光器选择性区域再生的影响

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Noda S; Fujiwara K; Nakayama T;
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年度 1985
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1. Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge_xSi_(1-x) buffer layers [J] . Michael E. Groenert, Arthur J. Pitera, Rajeev J. Ram, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第3期

机译：通过弛豫渐变的Ge_xSi_（1-x）缓冲层在Si基板上制造的改进的室温连续波GaAs / AlGaAs和InGaAs / GaAs / AlGaAs激光器
2. High-efficiency AlGaAs/GaAs single-quantum-well semiconductor laser with strained superlattice buffer layer [J] . Imanaka K., Sato F. IEEE Photonics Technology Letters . 1989,第1期

机译：具有应变超晶格缓冲层的高效AlGaAs / GaAs单量子阱半导体激光器
3. Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers [J] . Offsey S.D., Shcaff W.J. IEEE Photonics Technology Letters . 1990,第1期

机译：GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离禁区异质结构单量子阱激光器的光学和微波性能
4. Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact Regrowth [C] . Driad R., Duchenois A.M., Menouni M., Solid State Device Research Conference, 1994. ESSDERC '94 . 1994

机译：通过CBE选择性基极接触再生获得的自对准AlGaAs / GaAs HBT电路
5. Three wave mixing in Periodically Quantum-Well-Intermixed GaAs:AlGaAs superlattices: Modeling, Optimization, and Parametric Generation. [D] . Sigal, Iliya. 2010

机译：GaAs：AlGaAs超晶格在周期性量子阱混合中的三波混合：建模，优化和参数生成。
6. A comparative study of low energy radiation response of AlAs GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures [O] . M. Jiang, H. Y. Xiao, S. M. Peng, -1

机译：AlAsGaAs和GaAs / AlAs超晶格的低能辐射响应及其对电子结构的损伤作用的比较研究
7. Suppression of thermal atomic interdiffusion in C-doped InGaAs∕AlGaAs quantum well laser structures using TiO2 dielectric layers [O] . P. L. Gareso, M. Buda, L. Fu, 2004

机译：使用TiO2介电层抑制C掺杂IngaAs / Algaas量子孔激光结构中的热原子互连
8. InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Beadie, G. 2000

机译：通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构

Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self-aligned structure lasers

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