A wafer level monitoring method for plasma-charging damage using antenna PMOSFET test structure

摘要

We propose a novel monitoring method for plasma-charging damage using various antenna test structures. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that initial gate current and substrate current indicate plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices.