The trench insulated gate bipolar transistor a high power switching device

摘要

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TEGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the trench IGBT over its conventional planar variant are highlighted. It is concluded that the trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.