Parametric Measurements of Switching Losses of Insulated Gate Bipolar Transistor in Pulsed Power Applications

摘要

Insulated gate bipolar transistors (IGBTs) are the workhorse in power electronics. Due to recent improvements in IGBTs, they also find many applications in the field of pulsed power. The switching losses of an IGBT are normally given from the supplier, but not from typical converter applications. These data are not valid for pulsed power applications. In this paper, parametric measurements of turn-on losses are shown for IGBTs in a typical pulsed power application.