The complementary insulated-gate bipolar transistor (CIGBT)-a new power switching device

摘要

A new power switching device, the complementary insulated-gate bipolar transistor (CIGBT), is described. The device achieves very high switching speeds typical of DMOS transistors, while it maintains the low on-state resistance of the insulated-gate bipolar transistor (IGBT) on which it is based. The device incorporates a p-channel MOS transistor which acts to draw excess charge out of the base region of the IGBT as the device is turned off. Fabricated devices whose specific on-resistance is only 20% greater than that of equal-area IGBTs display turn-off times under 700 ns, while the IGBTs require 35 mu s to reach the off state. The device is compared to equal-area IGBTs, DMOS transistors, and IGBTs whose minority-carrier lifetime has been reduced to achieve 700-ns turn-off times.