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The analysis of electrical processes in semiconductor cadmium selenide layers, caused by the structural transformations. Possible applications

机译:由结构转换引起的半导体硒化镉层中的电过程分析。可能的应用

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The physical conditions of functioning of sensitive elements for elastic deformation registration in microvolumes of electronic systems are analysed. The sensitive element is a semiconductor polycrystalline film containing crystallites of a two phase structure of (/spl alpha/+/spl beta/)CdSe. Considerable mechanical tensions arise at the intergrain boundary of the said /spl alpha/ and /spl beta/ crystallites. The results of that can be registered electrically in the form of the sharp change of current (equilibrium conductivity) in the circuit containing the sensitive element.
机译:分析了在微体积的电子系统中用于弹性变形配准的敏感元件起作用的物理条件。敏感元件是包含(/ spl alpha / + / spl beta /)CdSe两相结构微晶的半导体多晶膜。在所述/ spl alpha /和/ spl beta /微晶的晶界处产生相当大的机械张力。其结果可以以包含敏感元件的电路中电流的急剧变化(平衡电导率)的形式电记录。

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