首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >Solid State Recrystallization of II-VI Semiconductors: Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide
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Solid State Recrystallization of II-VI Semiconductors: Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide

机译:II-VI半导体的固态重结晶:在碲化镉,硒化镉和硒化锌中的应用

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摘要

Solid state recrystallization (SSR) has been very rarely used for semiconductors. It has nevertheless been proposed, and industrially used, for the single crystal growth of cadmium mercury telluride according to a quench-anneal process. The reasons of the interest of this process, in specific cases of II-VI semiconductors crystal growth, will be analyzed (particular phase diagrams, phase transitions in the solid state close to the melting point, high temperature contaminations..etc.. make the use of traditional melt growth techniques unfavourable) and illustrated refering to CdHgTe literature. Original results related to the binary compounds CdTe, CdSe and ZnSe will be presented.
机译:固态重结晶(SSR)很少用于半导体。然而,已经提出并工业上用于根据淬火退火工艺的碲化镉汞的单晶生长。在II-VI半导体晶体生长的特定情况下,将对该过程感兴趣的原因进行分析(特定的相图,接近熔点的固态相变,高温污染等)。不利于使用传统的熔体生长技术),并参考CdHgTe文献进行说明。将介绍与二元化合物CdTe,CdSe和ZnSe有关的原始结果。

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