Analysis of Space Radiation Effects in Gallium Arsenide and Cadmium Selenide Semiconductor Samples Using Luminescence Spectroscopic Techniques.

摘要

Analysis of space radiation effects in gallium arsenide and cadmium selenide semiconductor samples using luminescence spectroscopic techniques. The M0006 semiconductor samples were placed into a 28.5 degree inclination, 480 km altitude, near-circular orbit aboard the Long Duration Exposure Facility satellite and exposed to direct space environment for a period of 11 months, and were shielded by 0.313 inches of aluminum for another 58 months. The samples were examined for changes using cathodoluminescence and photoluminescence in various wavelength regions from 0.5 to 1.8 micrometers. Samples were cooled to approximately 10 degrees Kelvin in a vacuum of 10-8. (JS)