FOND (Fully Overlapped Nitride-etch defined Device): a new device architecture for high-reliability and high-performance deep submicron CMOS technology

摘要

An alternative device architecture for improved hot carrier reliability which is based on the GOLD concept is proposed. The gate overlap is accurately controlled independently of the implant conditions. A comparison with LDD devices shows a large improvement in resistance against hot-carrier degradation with this new device architecture for the n- and p-MOSFET. The optimized FOND devices have the highest lifetime ever reported for a 0.35 /spl mu/m CMOS technology.