The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers

摘要

We compare the optical gain uniformity in 1.3-/spl mu/m InAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.56:0.44) and InGaAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers.