MOSFET reverse short channel effect due to silicon interstitial capture in gate oxide

摘要

We present a new mechanism for the anomalous threshold voltage roll-off behavior of submicron MOSFETs, commonly referred to as reverse short channel effect (RSCE). We assume in our model that interstitials injected into the gate oxide give rise to a position dependent charge distribution along the Si-SiO/sub 2/-interface. Simulations based on this model are in good agreement with measurements of the RSCE and its independence of substrate bias which is observed for MOSFETs with nearly flat channel profiles.