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Delay models for timing simulation of CMOS/BiCMOS/BiNMOS mixed digital circuits

机译:用于CMOS / BiCMOS / BiNMOS混合数字电路时序仿真的延迟模型

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The authors report on delay models for three basic structures, CMOS, BiCMOS and BiNMOS inverters. The models account for input slope. They also account for the various second order effects such as short channel effects in MOS transistors, high current effects in BJTs, and the device parasitics of MOS and BJT transistors. The error between the delay models and SPICE is for most cases within 5%. The models have been implemented within a simulator used to estimate the propagation delay of a chain of mixed CMOS/BiCMOS/BiNMOS inverters. The error between the delays estimated by the simulator is two orders of magnitude faster than SPICE.
机译:作者报告了三种基本结构(CMOS,BiCMOS和BiNMOS反相器)的延迟模型。模型考虑了输入斜率。它们还考虑了各种二阶效应,例如MOS晶体管中的短沟道效应,BJT中的高电流效应以及MOS和BJT晶体管的器件寄生效应。在大多数情况下,延迟模型与SPICE之间的误差在5%以内。这些模型已在仿真器中实现,该仿真器用于估算混合CMOS / BiCMOS / BiNMOS反相器链的传播延迟。模拟器估计的延迟之间的误差比SPICE快两个数量级。

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