Self-consistent simulation of hot-carrier damage enhanced gate induced drain leakage

摘要

In this work a consistent physical model for gate induced drain leakage (GIDL) and its increase due to oxide charge build-up during hot-carrier (hc) degradation is presented. The model is used to investigate the influence of oxide charge on GIDL characteristics with 2D device simulation. A self-consistent simulation of hc stress is performed. Results for normal drain current reduction and GIDL increase due to oxide charge accumulation are compared to experimental data. An application to drain engineering of a 0.25 mu m device is demonstrated.