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Epitaxial Growth and Magnetism

机译:外延生长和磁性

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摘要

Growth phenomena and magnetism of metallic films are not easy to descirbe at the same level of precision. A small variation of distances can drastically modify the magnetic properties of thin metallic films. In this contribution different aspects encountered in the growth of thin magnetic metallic films are addressed. Within an itinerant magnetism scheme, the main difficulty arises from the numbero f possible magnetic arrangements induced by the competition between nearest-neighbors Ferromagnetic and Antiferromagnetic couplings. However we show that the description of the electronic and magnetic structure at T=0 K by well-established band structure frameworks provides useful and precise information on the growth of a transition metal on another. Due to the large amount of experimental data available, the Fe/Cr system is taken as an example. The influence of steps at the interface is discussed and the possibility of magnetic domains is shown. a simple model of growth taking into account variable interdiffusion rate and layer-by-layer quality is given. These simulatiosn are used to explain experimental results where interdiffusion at the itnerface is very common.
机译:在相同的精度水平上,金属膜的生长现象和磁性不容易被描述。距离的微小变化会极大地改变金属薄膜的磁性。在该贡献中,解决了在磁性金属薄膜的生长中遇到的不同方面。在巡回磁性方案中,主要困难是由最邻近的铁磁和反铁磁耦合之间的竞争引起的可能的磁性排列引起的。但是,我们表明,通过完善的能带结构框架对T = 0 K处的电子和磁性结构的描述提供了关于过渡金属在另一种上的生长的有用且精确的信息。由于可用的实验数据很多,因此以Fe / Cr系统为例。讨论了界面处台阶的影响,并显示了磁畴的可能性。给出了一个考虑变量互扩散率和逐层质量的简单增长模型。这些模拟用来解释实验结果,在实验结果中,相互扩散非常普遍。

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