Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409;
Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409;
Department of Electrical Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409;
Department of Electrical Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409;
Department of Electrical Engineering, Texas AM University, College Station, Texas 77843;
Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409;
机译:在湿法蚀刻/ DRIE和表面活性剂改性的TMAH蚀刻中具有不同长宽比的尖锐硅尖端
机译:使用局部阳极氧化和各向异性TMAH湿法蚀刻来控制硅电极的形状和间隙宽度
机译:通过聚焦离子束注入和TMAH湿法刻蚀制备硅纳米结构
机译:用于氮化物半导体的选择性侧壁和纳米鳍片的TMAH湿法蚀刻
机译:将选择性硅外延与薄的侧壁隔离层集成在一起,用于亚微米级的高源/漏MOSFET。
机译:揭示侧壁取向在GaN基紫外发光二极管的湿法化学蚀刻中的作用
机译:TMAH溶液在硅上致摩擦诱导的选择性蚀刻