Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH UES, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432;
Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH General Dynamic Information Technology, 5100 Springfield PK., Dayton, OH 45431;
Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH;
Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH Research Institute, University of Dayton, Dayton, OH 45469;
Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH ATT Government Solutions, 2940 Presidential Dr., Ste. 390, Fairborn, OH 45324;
Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH;
Air Force Research Laboratory, Materials;
PECVD; index of refraction; plasma; photonic thin film;
机译:等离子体功率和沉积压力对等离子体增强化学气相沉积法沉积低介电常数等离子体聚合环己烷薄膜性能的影响
机译:SINX和等离子体聚合物层的室温沉积用于柔性多层阻挡膜通过等离子体增强化学气相沉积方法
机译:在In0.82Al0.18As上通过电感耦合等离子体化学气相沉积和等离子体增强化学气相沉积生长的氮化硅膜的界面特性
机译:高折射率聚合物薄膜的等离子体增强化学气相沉积
机译:通过等离子增强化学气相沉积在聚合物基材上沉积无机薄膜。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:脉冲等离子体增强化学气相沉积反应器中用于聚合物薄膜沉积的传质特性
机译:用电子束生成等离子体的等离子体增强化学气相沉积siOx薄膜