Contact potential difference methods for full wafer characterization of Si/SiO2 interface defects induced by plasma processing

摘要

Abstract: We present fundamentals and representative examples of fast non-contact full wafer characterization of oxide and silicon defects induced by plasma and thermal processing steps. Parametric and distribution results are obtained using the recently introduced 'COCOS' and surface doping methodologies that enhance contact potential difference and surface photovoltage methods. The measured parameters include flatband voltage, interface trap density, soft breakdown, oxide surface potential and recovery lifetime. We studied the effects of plasma metal etching and ashing, thermal oxidation, anneal ambients and nitridation methods. !10