Implant damage evaluation at high energy and low dose ion implantation using white defect of CCD image sensor

摘要

The ion implant damage was evaluated using the white defect level of the CCD image sensor in the high energy and the low dose implantation. As a result, it has been understood that beam irradiation time is closely related to the white defect level. Furthermore a little difference at the beam irradiation time influences the level of white defects. It succeeds in the first time evaluation of the implantation damage in high energy and the low dose implantation, and it has been understood to be able to discuss the implantation damage by the similar mechanism of the high dose implantation also in the low dose implantation.