Backside Failure Analysis by Electroluminescence on Microwave Devices

摘要

Ⅲ-Ⅴ HBT (Heterojunction Bipolar Transistor) and HEMTrn(High Electron Mobility Transistor) are playing a key role forrnpower and RF low noise applications. As well as thernimprovement of the MMIC performances, the localization ofrnthe defects and the failure analysis of these devices are veryrnchallenging. Active area thickness is only few nanometers,rnbackside failure localization is mandatory because of thermalrndrain or metal bridge covering the front side, materialsrninvolved might be of ultimate hardness and/or high chemicalrnsensitivity while failure mechanisms strongly differ from Sirntechnology ones. To face these challenges, we have developedrna complete approach, without degrading the component, basedrnon backside failure analysis by electroluminescence. Itsrnefficiency and completeness have been demonstrated throughrncase studies.