Process compensated CMOS temperature sensor for microprocessor application

摘要

This paper presents the design and implementation of a process compensated CMOS temperature sensor that does not require any BJTs. CTAT and PTAT sensors that are based on temperature-dependent threshold voltage (VTH) are designed to have same process variation and outputs are subtracted to suppress the process spread. Proposed design is fabricated in a TSMC 0.18um 2P6M process and measured results show less than an −1.8°C to +0.9°C error over −40°C to 85°C after 1-point calibration. The noise level is less than 100uV/√Hz, which is equivalent to 0.043°C and overall power consumption is 478uW.