Wave-ordered structures formed on SOI wafers by reactive ion beams

摘要

The dependence of wave-ordered structure (WOS) formation during low-energy ion bombardment of silicon upon the main experimental parameters (ion type, (e.g., N~+_2 or O~+_2), ion energy, incidence angle and wafer temperature) and WOS formation dynamics have been studied. WOS in N~+_2/Si system are uniform, stable and their wavelengths are on the order of nanometers. The geometry and internal structure of individual waves in the N~+_2/Si system have been determined. We show that WOS formation on SOI using ion beams can be controlled. direct c 1999 Elsevier Science B.V. All rights reserved.