Solid-phase doping of silicon by flash lamp and laser irradiation

摘要

Abstract: A comparative investigation of flash lamp and laser doping of Si was carried out in order to study a possibility of pulsed solid-phase processing of large size wafers. Submicron boron-doped layers in Si were formed by either Xe flash lamp or CO$-2$/ laser applications. Two types of surface dopant source were successfully used: pure boron and boron-containing emulsitone. SIMS, four- probe method, and Hall effect were used for sample characterization. !5