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An Asymmetrical Source/Drain Junction Structure for SOI RFIC: Immune to Floating Body Effects

机译：SOI RFIC的不对称源极/漏极结结构：对浮体效应的免疫

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《International Workshop on Junction Technology: Extended Abstracts; 20040315-16; Shanghai(CN)》|2004年||共4页
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1. Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure [J] . Taizoh Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第5B期

机译：肖特基源漏结构抑制多晶硅薄膜晶体管中的浮体效应
2. BESS: a source structure that fully suppresses the floating body effects in SOI CMOSFETs [J] . Horiuchi M., Tamura M. IEEE Transactions on Electron Devices . 1998,第5期

机译：BESS：一种源极结构，可完全抑制SOI CMOSFET中的浮体效应
3. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs [J] . J.M. Rafi, E. Simoen, A. Mercha, Solid-State Electronics . 2005,第9期

机译：热载流子应力对部分耗尽SOI nMOSFET的薄栅氧化物的栅极感应浮体效应和漏极电流瞬变的影响
4. An asymmetrical source/drain junction structure for SOI RFIC: immune to floating body effects [C] . Yang R., Li J.F., Qian H., Junction Technology, 2004. IWJT '04. The Fourth International Workshop on . 2004

机译：SOI RFIC的不对称源/漏结结构：不受浮体效应的影响
5. Low-voltage SOI MOSFET with suppressed floating body effects [D] . Ren, John Zhizhang 1999

机译：具有抑制的浮体效应的低压SOI MOSFET
6. Asymmetric Injection in Organic Transistors via DirectSAM Functionalization of Sourceand Drain Electrodes [O] . Thomas Mosciatti, Pierpaolo Greco, *, 2017

机译：通过直接不对称注入有机晶体管源代码的SAM功能化和漏电极
7. Design Considerations of Electrically Induced Source/Drain Junction SOI MOSFETs for the Reduced Short Channel and Hot Carrier Effects [O] . Santosh Kumar Gupta, S. Baishya 2011

机译：用于减少短通道和热载体效应的电诱导源/漏电区SOI MOSFET的设计考虑因素
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