METHOD AND STRUCTURE FOR REDUCING SOI DEVICE FLOATING BODY EFFECTS WITHOUT JUNCTION LEAKAGE

摘要

A method of reducing silicon-on-insulator (SOI) floating body effects in a semiconductor device includes forming a buried insulator layer over a substrate material; forming a crystalline SOI layer over the buried insulator layer; forming a gate conductor over the SOI layer; and performing an angled implant of the semiconductor device so as to introduce an amorphizing species into the SOI layer in an asymmetric manner with respect to source and drain regions of the device. The amorphizing species introduced into the source region of the device bridges across a source-to-body diode barrier, while the amorphizing species introduced into the drain region of the device are localized entirely therein.