Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-filling by O_3/TEOS CVD

摘要

The SC-1 treatment prior to the O_3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O_3/TEOS CVD.