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Process for formation of SiON / TEOS interlayer dielectric with post-treatment of CVD nitrided silica oxide layer
Process for formation of SiON / TEOS interlayer dielectric with post-treatment of CVD nitrided silica oxide layer
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机译:CVD氮化二氧化硅层的后处理形成SiON / TEOS层间电介质的方法
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摘要
An interlevel dielectric including a tetraethyl orthosilicate (TEOS) oxide and a silicon oxynitride (SiON) etch stop layer is formed for use in integrated circuit fabrication. A SiON layer is deposited onto a semiconductor substrate which may include transistors and/or interconnect levels. The SiON layer is heated before deposition of the TEOS layer. Heating of the SiON layer greatly reduces the number of defects formed during the TEOS deposition. A highly conformal, high-quality interlevel dielectric is thereby formed.
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