The Effect of Various Process Induced Damages on Wet Etching Rate Difference

摘要

The influence of various implantation effects on wet chemical etching rate, based on the oxide films, has been examined. The film etching rate using phosphorous and arsenic specious has a good correlation with previous research. However, the etching behavior with boron dopant level has an extremely different behavior than we expected. From our study, the main factor of oxide film etching are could be explained by three groups: (I) Region-A (implantation damage before Rp point), (II) Region-B (Dopant induced blocking layer Rp point), and (III) Region-C (implantation damage above Rp point). The results of these investigations will be useful to understand the etching behavior of ultra high-dose implanted oxide films.