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A Study of a Single-Wafer Process in Metal Contact Hole Cleaning

机译:金属接触孔清洗的单晶片工艺研究

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摘要

We have implemented our first 300-mm single-wafer metal contact hole clean in order to eliminate a defectivity issue inherent to wet bench cleaning tools. The flow defect issue manifests itself in a characteristic pattern that appears to move defects from the wafer edge to the wafer center. The net effect is damage to the bit line in the form of line thinning, line delamination, and poor gap fill. The single-wafer Spin Processor approach eliminates the flow defect pattern and resolves these damage concerns. Furthermore, it enables a significant reduction in the total number of defects observed and a corresponding increase in die yield without loss of device performance.
机译:我们已经实施了首个300毫米单晶圆金属接触孔清洁工艺,以消除湿工作台清洁工具固有的缺陷问题。流动缺陷问题以一种特征图案表现出来,该特征图案似乎将缺陷从晶片边缘移动到晶片中心。最终结果是以线变细,线分层和不良的间隙填充的形式损坏位线。单晶片旋转处理器方法消除了流缺陷图案并解决了这些损坏问题。此外,它可以大大减少观察到的缺陷总数,并相应提高管芯良率,而不会损失器件性能。

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