High-Throughput Contact-Hole Resolution Metric for Photoresists: Full-Process Sensitivity Study

摘要

The ability to accurately quantify the intrinsic resolution of chemically amplified photoresists is critical for the optimization of resists for extreme ultraviolet (EUV) Iithography. We have recently reported on two resolution metrics that have been shown to extract resolution numbers consistent with direct observation. In this paper we examine the previously reported contact-hole resolution metric and explore the sensitivity of the metric to potential error sources associated with the experimental side of the resolution extraction process. For EUV exposures at the SEMATECH Berkeley microfield exposure tool, we report a full-process error-bar in extracted resolution of 1.75 nm RMS and verify this result experimentally.