LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS FABRICATED BY ELECTROLESS PLATING NI INDUCED CRYSTALLIZATION OF AMORPHOUS SI

摘要

Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films were usually deposited by the physical vapor deposition (PVD) method. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni induced lateral crystallization TFT were as good as those of PVD Ni induced lateral crystallization TFT.