ULTRATHIN HIGH-K DIELECTRICS GROWN BY ATOMIC LAYER DEPOSITION: A COMPARATIVE STUDY OF ZrO_2, HfO_2, Y_2O_3 AND A1_2O_3

摘要

We summarize our recent work on atomic layer deposition (ALD) of metal oxides for advanced gate dielectrics applications. We present data on ultrathin (<10 nm) ZrO_2, HfO_2, Y_2O_3 and Al_2O_3 deposited on silicon. Both physical and electrical properties, as well as the effects of pre- and post-deposition treatments will be discussed.