REDUCING PLASMA CHEMISTRY FOR PHOTORESIST AND RESIDUE REMOVAL OVER LOW-K MATERIALS

摘要

Reducing plasma chemistries using H_2 and N_2 plasma gases have been studied for photoresist stripping and polymer residue removal over a variety of low-k materials. The effect of hydrogen concentration, ranging from 0% to 100% in the plasma gas, on photoresist ash rate, ashing selectivity, and the properties of low-k materials have been investigated. The plasma process capabilities have been investigated for a range of reducing plasma conditions.