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Solvent free photoresist strip and residue removal processing for post etching of low-k films
Solvent free photoresist strip and residue removal processing for post etching of low-k films
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机译:低k膜后蚀刻的无溶剂光刻胶剥离和残留去除工艺
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摘要
A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
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