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Electrical and Mechanical Studies of MCM-D Interconnect Structure

机译:MCM-D互连结构的电气和机械研究

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摘要

The electrical and mechanical properties of a multilayer thin-film MCM-D interconnect are studied in this investigation. Numerical analyses are executed to calculate the electrical parameters of thin-film microstrip line and it shows that the additional delay decreases while increasing the thickness of the conductor.rnEnvironmental scanning electron microscopy (E-SEM) was utilized to characterize mechanical induced defects in signal line. Cracking on metal lines and delamination of polyimide/metal interfaces due to mismatch of coefficient of thermal expansion and the moisture absorption of the polyimide film were observed.
机译:在这项研究中研究了多层薄膜MCM-D互连的电气和机械性能。通过数值分析计算了薄膜微带线的电学参数,结果表明增加导体厚度时,附加延迟减小。利用环境扫描电子显微镜(E-SEM)表征信号线中的机械缺陷。观察到由于热膨胀系数和聚酰亚胺膜的吸湿率不匹配而引起的金属线上的裂纹和聚酰亚胺/金属界面的分层。

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