Ion Doping System

摘要

Ion doping technology (IDT) for impurity doping is exactly one of the most important technology in the manufacturing of low temperature ploy-Silicon (LPS) TFT. Improvement of IDT are carried on according to more large-size glass and the requirement of LPS-TFT's performance. IDT has become attractive very much, because it is required the application for forming Source/Drain , LDD region and adjusting Vth. We have developed Ion Doping System for large-size glass up to 730 x 920 mm~2. It is focused to achieve using the sheet style (rectangular) beam and scanning glass, and currently we have developed the new system that has the function of mass separation of ion beam.