Characterization of (001)-orientated polycrystalline α-HgI_2 films grown by hot wall physical vapor deposition

摘要

The highly (001)-orientated α-HgI_2 film was deposited by hot wall physical vapor deposition (HWPVD) technology. The scanning electron microscopy (SEM), X-ray diffraction (XRD), dark current versus applied voltage and capacitance-frequency characteristics analysis showed that the film was compactly formed by separated columnar monocrystallines with uniform orientation along c-direction and with high resistivity (2.5×10~(12)Ω·cm) and low dark current.