Determining Band Offset and Interface Charge Density of Hydrogenated Nanocrystalline Silicon/Crystalline Silicon Heteroj unction Diode by C-V Matching Method

摘要

In this paper, we report the band offset and interface charge density properties of the nc-Si:H(n)/c-Si(p) heterojunction (HJ) diode by the capacitance-voltage (C- V) measurement and theoretical modeling. By employing the ideal anisotype HJ capacitance model and numerical C-V matching method, the band offset and heterostructure interface charge density of the nc-Si:H/c-Si HJ have been obtained and analyzed. An interface charge density on the order of 10~(11) cm~(-2) is estimated via the numerical C-V matching technique, and the low interface defect density has also been confirmed by the frequency insensitive C-f results.